Title :
The role of nitrogen in HfSiON defect passivation
Author :
Connor, R.O. ; Aoulaiche, M. ; Pantisano, L. ; Shickova, A. ; Degraeve, R. ; Kaczer, B. ; Groeseneken, G.
Author_Institution :
IMEC Leuven, Leuven, Belgium
Abstract :
In this work we examine the effect of nitrogen incorporation on the defect generation behavior in HfSiON gate dielectric layers. We show that nitrogen effectively passivates pre-existing defects in the HfSiO, but the effect is quickly reversed during stress leading to high levels of SILC and NBTI.
Keywords :
MOSFET; dielectric materials; hafnium compounds; leakage currents; nitrogen; passivation; thermal stability; HfSiON; MOSFET; NBTI; SILC; defect passivation; gate dielectric layers; leakage current; nitrogen effect; preexisting defects; Annealing; Degradation; High-K gate dielectrics; MOSFETs; Niobium compounds; Nitrogen; Passivation; Plasma measurements; Stress; Titanium compounds; Hafnium silicate; MOSFET; NBTI; SILC; dielectric; nitrogen;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173381
