• DocumentCode
    2672377
  • Title

    Soft error rate cross-technology prediction on embedded DRAM

  • Author

    Fang, Yi-Pin ; Vaidyanathan, Balaji ; Oates, Anthony S.

  • Author_Institution
    Technol. of Reliability Phys., R&D, Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
  • fYear
    2009
  • fDate
    26-30 April 2009
  • Firstpage
    925
  • Lastpage
    928
  • Abstract
    Embedded DRAM has been widely used in System on Chip (SOC) systems due to its higher density than SRAM. Embedded DRAM soft error rate (SER) has become an important subject since more embedded dynamic random access memories (DRAM) are now embedded on the chip as technology advances. Experiments show alpha-SER rapidly declines with embedded DRAM scaling while neutron-SER is less significantly impacted. We develop a simple and rapid method to predict neutron- and alpha-SER scaling trends for embedded DRAM without the use of complicated simulation procedures.
  • Keywords
    DRAM chips; embedded systems; neutron effects; system-on-chip; SRAM; cross-technology prediction; embedded DRAM; embedded dynamic random access memory; neutron-SER; soft error rate; system-on-chip; Alpha particles; Databases; Error analysis; Impurities; Neutrons; Packaging; Predictive models; Random access memory; Silicon; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2009 IEEE International
  • Conference_Location
    Montreal, QC
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-2888-5
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2009.5173382
  • Filename
    5173382