DocumentCode
2672377
Title
Soft error rate cross-technology prediction on embedded DRAM
Author
Fang, Yi-Pin ; Vaidyanathan, Balaji ; Oates, Anthony S.
Author_Institution
Technol. of Reliability Phys., R&D, Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
fYear
2009
fDate
26-30 April 2009
Firstpage
925
Lastpage
928
Abstract
Embedded DRAM has been widely used in System on Chip (SOC) systems due to its higher density than SRAM. Embedded DRAM soft error rate (SER) has become an important subject since more embedded dynamic random access memories (DRAM) are now embedded on the chip as technology advances. Experiments show alpha-SER rapidly declines with embedded DRAM scaling while neutron-SER is less significantly impacted. We develop a simple and rapid method to predict neutron- and alpha-SER scaling trends for embedded DRAM without the use of complicated simulation procedures.
Keywords
DRAM chips; embedded systems; neutron effects; system-on-chip; SRAM; cross-technology prediction; embedded DRAM; embedded dynamic random access memory; neutron-SER; soft error rate; system-on-chip; Alpha particles; Databases; Error analysis; Impurities; Neutrons; Packaging; Predictive models; Random access memory; Silicon; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173382
Filename
5173382
Link To Document