DocumentCode :
2672377
Title :
Soft error rate cross-technology prediction on embedded DRAM
Author :
Fang, Yi-Pin ; Vaidyanathan, Balaji ; Oates, Anthony S.
Author_Institution :
Technol. of Reliability Phys., R&D, Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
fYear :
2009
fDate :
26-30 April 2009
Firstpage :
925
Lastpage :
928
Abstract :
Embedded DRAM has been widely used in System on Chip (SOC) systems due to its higher density than SRAM. Embedded DRAM soft error rate (SER) has become an important subject since more embedded dynamic random access memories (DRAM) are now embedded on the chip as technology advances. Experiments show alpha-SER rapidly declines with embedded DRAM scaling while neutron-SER is less significantly impacted. We develop a simple and rapid method to predict neutron- and alpha-SER scaling trends for embedded DRAM without the use of complicated simulation procedures.
Keywords :
DRAM chips; embedded systems; neutron effects; system-on-chip; SRAM; cross-technology prediction; embedded DRAM; embedded dynamic random access memory; neutron-SER; soft error rate; system-on-chip; Alpha particles; Databases; Error analysis; Impurities; Neutrons; Packaging; Predictive models; Random access memory; Silicon; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
ISSN :
1541-7026
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2009.5173382
Filename :
5173382
Link To Document :
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