Title :
Role of the deep parasitic bipolar device in mitigating the single event transient phenomenon
Author :
Mikami, Nobukazu ; Nakauchi, Takuya ; Oyama, Akira ; Kobayashi, Hajime ; Usui, Hiroki
Author_Institution :
Adv. Processor Dept., Sony Corp., Tokyo, Japan
Abstract :
It was found that the single event transient (SET) phenomenon in logic circuits strongly depends on doping concentrations. We think that two parasitic bipolar devices located under a MOS gate with low channel doping concentration suppress SET. Radiation induced electrons are transferred from a drain to a source. As a result, SET can be reduced without implementing any extra circuit area.
Keywords :
bipolar logic circuits; bipolar transistors; radiation hardening (electronics); semiconductor doping; MOS gate; SET suppression; channel doping concentration; deep parasitic bipolar device; logic circuits; radiation-induced electrons; single event transient phenomenon; Alpha particles; Circuit testing; Doping; Error analysis; Logic circuits; Monitoring; Neutrons; Performance evaluation; Resistors; Single event upset; Logic circuit; SER; SET; SEU; Single Event Upset; Single event transient; parasitic bipolar transistor; soft error rate;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173384
