DocumentCode
2672401
Title
Development of solid state materials with negative index of refraction and "perfect" lenses
Author
Shvets, G.
Author_Institution
Illinois Inst. of Technol., Chicago, IL, USA
fYear
2003
fDate
6-6 June 2003
Abstract
We demonstrate that a photonic structure consisting of materials with positive and negative dielectric permittivity can exhibit left-handedness. Examples of plasmonic (Ag) and phononic (SiC) building blocks will be used. SiC is also attractive for a near-field "perfect" lens which dramatically enhances resolution of near-field imaging.
Keywords
lenses; optical materials; permittivity; refractive index; semiconductor thin films; silicon compounds; silver; surface phonons; surface plasmons; wide band gap semiconductors; Ag; SiC; image resolution; left-handed materials; near-field imaging; near-field perfect lens; negative dielectric permittivity; negative refractive index; phononic building blocks; photonic structure; plasmonic building blocks; positive dielectric permittivity; solid state materials; Dielectric materials; Frequency; Lenses; Magnetic materials; Optical materials; Optical refraction; Permittivity; Silicon carbide; Solid state circuits; Surface waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-749-0
Type
conf
DOI
10.1109/QELS.2003.238224
Filename
1276430
Link To Document