DocumentCode
2672419
Title
Correlation of soft error rates between mono-energetic and full spectrum beams on a 90nm SRAM technology
Author
Patel, Nayan B. ; Puchner, Helmut
Author_Institution
R & D India, Cypress Semicond., Bangalore, India
fYear
2009
fDate
26-30 April 2009
Firstpage
948
Lastpage
951
Abstract
Mono-energetic beams and full spectrum beams have been used for years to calculate the soft error rates of SRAM devices. Each beam type offers advantages and disadvantages, but availability is one of the major issues with full spectrum beams due to limited number of facilities available worldwide. We present correlation data for the newly made available full spectrum ANITA (Atmospheric-like Neutrons from thIck TArget) neutron beam at TSL, Sweden and the corresponding mono-energetic neutron beam. Single bit and multi bit events on a 90 nm SRAM ldquogolden devicerdquo are correlated and compared. In addition we also compare the soft error rates to a single 180 MeV neutron beam run to further investigate the accuracy of this method. The soft error rates extracted from the different methodologies are comparable and allow the use of the full spectrum ANITA beam for modern SRAM devices.
Keywords
SRAM chips; neutron effects; Atmospheric-like Neutrons from thIck TArget; SRAM device technology; Sweden; TSL; correlation data; electron volt energy 180 MeV; full spectrum ANITA; full spectrum beams; mono-energetic neutron beams; multi bit events; single bit events; size 90 nm; soft error rate correlation; soft error rate extraction; Acceleration; Energy measurement; Error analysis; MONOS devices; Neutrons; Particle beams; Random access memory; Research and development; Tail; Testing; Full spectrum beam; Neutron SER;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173386
Filename
5173386
Link To Document