DocumentCode :
267243
Title :
Interleaved Flyback Micro-inverter with SiC MOSFET
Author :
Shiming Tan ; Ping Lin ; Changsheng Hu ; Linglin Chen ; Dehong Xu
Author_Institution :
Coll. of Electr. Eng., Zhejiang Univ., Hangzhou, China
fYear :
2014
fDate :
5-8 Nov. 2014
Firstpage :
285
Lastpage :
290
Abstract :
In this paper, we discuss the interleaved Flyback Micro-inverter with SiC device. The Micro-inverter is composed of front-end interleaved Flyback converter and a 50Hz switching MOSFET inverter. A loss model is used to compare the efficiency between using SiC devices and conventional device. Three solutions are compared: Micro-inverter with Si diode, Micro-inverter with SiC diode, and Micro-inverter with SiC MOSFET for synchronous rectifier. Finally the comparison is verified by experiment.
Keywords :
MOSFET; invertors; power convertors; rectifiers; silicon compounds; wide band gap semiconductors; SiC; frequency 50 Hz; front-end interleaved flyback converter; interleaved flyback microinverter; metal oxide semiconductor field effect transistor; switching MOSFET inverter; synchronous rectifier; Bridge circuits; Inverters; MOSFET; Rectifiers; Silicon; Silicon carbide; Switches; Micro-inverter; SiC devices; efficiency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Application Conference and Exposition (PEAC), 2014 International
Conference_Location :
Shanghai
Type :
conf
DOI :
10.1109/PEAC.2014.7037869
Filename :
7037869
Link To Document :
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