DocumentCode
2672435
Title
A Planar-Type Low-Noise GaAs Monolithic Microwave Amplifier
Author
Deng Xian-can ; Zhu Guo-liang
fYear
1981
fDate
15-19 June 1981
Firstpage
359
Lastpage
361
Abstract
A planar low noise amplifier has been fabricated by selectively implanting oxygen to define the active devices. Noise figure 2.5 dB with associated gain of 7dB over the frequency range 4.8-5.3 GHz has been obtained.
Keywords
Buffer layers; Circuits; FETs; Fabrication; Gallium arsenide; Low-noise amplifiers; MMICs; Microwave amplifiers; Microwave devices; Semiconductor device noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location
Los Angeles, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1981.1129925
Filename
1129925
Link To Document