DocumentCode :
267245
Title :
Analysis and comparison of Si and SiC power devices on a grid-tie fuel cell energy storage system
Author :
Pittini, Riccardo ; Anthon, Alexander ; Zhe Zhang ; Andersen, Michael A. E.
Author_Institution :
Dept. of Electr. Eng., Tech. Univ. of Denmark, Lyngby, Denmark
fYear :
2014
fDate :
5-8 Nov. 2014
Firstpage :
296
Lastpage :
301
Abstract :
In renewable energy applications power conversion efficiency is major concern. This is especially true for grid-tie energy storage systems based on bidirectional dc-dc and dc-ac converters where power flows through these system components. Latest developments in power semiconductors technology significantly reduced switching and conduction losses in dc-dc and dc-ac converters allowing efficiencies above 98%. This paper analyzes the efficiency improvement that is achieved by the introduction of SiC power semiconductors in dc-dc and dc-ac converters. The analysis is focuses on fuel cell grid-tie energy storage systems. Results highlight dc-dc conversion efficiencies up to 98.2% with an isolated topology and dc-ac conversion efficiencies up to 97.7%. Overall system efficiency improvements above 1% are achieved compared to traditional Si devices. Results on efficiency improvement are analyzed based on two laboratory converter prototypes of an isolated full bridge boost converter (IFBBC) and a three level T-type inverter (BSNPC).
Keywords :
DC-AC power convertors; DC-DC power convertors; fuel cell power plants; power grids; silicon; silicon compounds; BSNPC; IFBBC; SiC; bidirectional DC-AC converters; bidirectional DC-DC converters; conduction loss reduction; grid-tie fuel cell energy storage system; isolated full-bridge boost converter; isolated topology; power conversion efficiency; power semiconductor technology; renewable energy application; silicon-carbide power devices; switching loss reduction; system efficiency improvement; three-level T-type inverter; DC-AC power converters; DC-DC power converters; Fuel cells; Insulated gate bipolar transistors; MOSFET; Silicon; Silicon carbide; Silicon carbide (SiC); dc-ac converter; dc-dc converter; energy storage; power semiconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Application Conference and Exposition (PEAC), 2014 International
Conference_Location :
Shanghai
Type :
conf
DOI :
10.1109/PEAC.2014.7037871
Filename :
7037871
Link To Document :
بازگشت