The correlation between trap states and mechanical reliability of amorphous Si:H TFTs for flexible electronics

Author

Lee, Moon Ho ; Chang, S.T. ; Weng, Sz-Chi ; Liu, Wen-Hao ; Chen, Kuan-Jen ; Ho, Kuan-Yu ; Liao, M.H. ; Huang, Jheng-Jia ; Hu, G.-R.

Author_Institution

Inst. of Electro-Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan

fYear

2009

fDate

26-30 April 2009

Firstpage

956

Lastpage

959

Abstract

The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage, subthreshold swing, and mobility of carriers. The weak or broken bonds may contribute to the redistribution of trap states, and lead to unstable electrical characteristics of the a-Si:H TFTs on plastic substrates. We conclude that the DOS of an a-Si:H layer under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

Keywords

amorphous semiconductors; carrier mobility; flexible electronics; semiconductor device reliability; thin film transistors; Si:H; amorphous TFT; carrier mobility; correlation trapping; electrical characteristics; flexible electronics; mechanical reliability; threshold voltage; Amorphous materials; Capacitive sensors; Electric variables; Electron traps; Flexible electronics; Glass; Plasma temperature; Plastics; Substrates; Thin film transistors; a-Si:H; flexible; mechanical strain; trap state;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173388

Filename

5173388