Performance analysis of package parasitic inductances for fast switching MOSFET in converter

This paper analyzes the influence of package parasitic inductance of fast switching MOSFET in the transient operation. It is found that in the traditional common source MOSFET packages, the inductor in the source connection pin limits the switching speed and reduces the system stability by the gate oscillation. Therefore a package using separated connection for gate control of fast switching MOSFET is proposed. By separated the source connection between the power path and the driver path, the switching loss and the gate oscillation of MOSFET generated by package parasitic source inductor can be minimized. The effectiveness of the separated source package verifies in a boost PFC converter with the efficiency measurement and the switching waveforms.