Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2

Author

Jung, Hyung-Suk ; Park, Tae Joo ; Kim, Jeong Hwan ; Lee, Sang Young ; Lee, Joohwi ; Oh, Him Chan ; Na, Kwang Duck ; Park, Jung-Min ; Kim, Weon-Hong ; Song, Min-Woo ; Lee, Nae-In ; Hwang, Cheol Seong

Author_Institution

Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., Seoul, South Korea

fYear

2009

fDate

26-30 April 2009

Firstpage

971

Lastpage

972

Abstract

HfO₂, HfZr_xOy and ZrO₂ gate dielectrics are systematically compared in terms of the nMOS PBTI and pMOS NBTI. Compared to HfO₂, ZrO₂ exhibits higher capacitance and superior nMOS mobility characteristics. In addition, as the ZrO₂ content increases, Vth shift under the nMOS PBTI stress is dramatically reduced. This is mainly contributed to the lower density of pre-existing bulk traps related to the oxygen vacancies.

Keywords

MOSFET; hafnium compounds; high-k dielectric thin films; zirconium compounds; HfO₂; HfZr_xO_y; ZrO₂; bias temperature instability; capacitance; high-k gate dielectrics; nMOS mobility characteristics; pMOS; Crystallization; Hafnium oxide; Interface states; MOS devices; MOSFET circuits; Niobium compounds; Plasma temperature; Stress; Titanium compounds; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173392

Filename

5173392