Design of Wide-band Antireflection Coatings on GaAs Substrates for Long Wavelength IR Spectrum

Author

Nenkov, M. ; Gyoch, B. ; Pencheva, T.

Author_Institution

Rousse Univ., Rousse

fYear

2006

fDate

10-14 May 2006

Firstpage

167

Lastpage

172

Abstract

The investigation deals with problems of computer-aided design of wide-band antireflection coatings for semiconductor photo receiving devices (discrete photo receivers, IR CCD-cameras) based on HgCdTe sensitive material with optical windows from GaAs for the long wavelength infrared spectral region (8 mum - 12 mum). Wide-band antireflection multilayer structures from two different materials of high and low refractive index transparent in upper mentioned spectral region are designed and compared.

Keywords

CAD; II-VI semiconductors; III-V semiconductors; antireflection coatings; gallium arsenide; infrared detectors; mercury compounds; photodetectors; substrates; HgCdTe-GaAs; IR CCD-cameras; computer-aided design; discrete photo receivers; long wavelength IR spectrum; semiconductor photo receiving devices; wavelength 8 mum to 12 mum; wide-band antireflection coatings; wide-band antireflection multilayer structures; Coatings; Design automation; Gallium arsenide; Optical devices; Optical materials; Optical receivers; Optical refraction; Semiconductor materials; Substrates; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Technology, 2006. ISSE '06. 29th International Spring Seminar on

Conference_Location

St. Marienthal

Print_ISBN

1-4244-0551-3

Electronic_ISBN

1-4244-0551-3

Type

conf

DOI

10.1109/ISSE.2006.365379

Filename

4216019