Title :
Frequency and recovery effects in high-κ BTI degradation
Author :
Ramey, Stephen ; Prasad, Chetan ; Agostinelli, Marty ; Pae, Sangwoo ; Walstra, Steven ; Gupta, Satrajit ; Hicks, Jeffrey
Author_Institution :
Logic & Technol. Dev. Quality & Reliability, Intel Corp., Hillsboro, OR, USA
Abstract :
Net end-of-life aging prediction under realistic use conditions is the key objective for any product aging model. In this paper, a net degradation model is introduced and effects such as recovery, subsequent degradation, frequency, duty cycle, and recovery bias are evaluated. The high-kappa recovery behavior observed is consistent with SiO2 gate stacks, which allows the use of SiO2 models to predict recovery in both NMOS and PMOS high-kappa transistors.
Keywords :
MOSFET; high-k dielectric thin films; life testing; semiconductor device models; semiconductor device reliability; silicon compounds; NMOS transistors; PMOS transistors; SiO2; bias-temperature instability; end-of-life aging prediction; gate stacks; high-kappa BTI degradation; high-kappa recovery behavior; net degradation model; product aging model; Aging; CMOS logic circuits; Degradation; Frequency; Inverters; MOS devices; MOSFETs; Predictive models; Stress measurement; Voltage; Bias-Temperature Instability; Hi-κ; Recovery; reliability;
Conference_Titel :
Reliability Physics Symposium, 2009 IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-2888-5
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2009.5173404
