Title :
A 4GHz Low Noise GaAsFET Amplifier
Abstract :
A 4GHz low noise GaAsFET amplifier has been designed and fabricated. Time-delay protection circuit and input circuit without separation DC element has been used. The performence of two stages 4,0-4,5 GHz amplifier is N/sub F/ 2 db, G/sub a/ 24 db.
Keywords :
Circuit noise; Circuit testing; Impedance; Low-frequency noise; Low-noise amplifiers; Microwave devices; Noise figure; Protection; Pulse amplifiers; Semiconductor device noise;
Conference_Titel :
Microwave Symposium Digest, 1981 IEEE MTT-S International
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/MWSYM.1981.1129956
