DocumentCode :
2673068
Title :
Direct detectors for passive terahertz photodetecting systems based on Pb1−xSnxTe(In)
Author :
Khokhlov, Dmitry
Author_Institution :
Phys. Dept., Moscow State Univ., Moscow, Russia
fYear :
2011
fDate :
2-7 Oct. 2011
Firstpage :
1
Lastpage :
1
Abstract :
Physical principles of operation of the photodetecting devices based on the group III-doped IV-VI semiconductors are presented. We report on the performance of lead telluride-based single direct terahertz detectors. Architecture of a system for passive terahertz vision of room-temperature objects is presented.
Keywords :
IV-VI semiconductors; lead compounds; photodetectors; terahertz wave detectors; tin compounds; Ill-doped IV-VI semiconductors; Pb1-xSnxTe(In); lead telluride-based single direct terahertz detectors; passive terahertz photodetecting devices; passive terahertz vision; room-temperature objects; Detectors; Doping; Impurities; Lead; Photoconductivity; Sensitivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
ISSN :
2162-2027
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
Type :
conf
DOI :
10.1109/irmmw-THz.2011.6104934
Filename :
6104934
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2673068
بازگشت