• DocumentCode
    2673068
  • Title

    Direct detectors for passive terahertz photodetecting systems based on Pb1−xSnxTe(In)

  • Author

    Khokhlov, Dmitry

  • Author_Institution
    Phys. Dept., Moscow State Univ., Moscow, Russia
  • fYear
    2011
  • fDate
    2-7 Oct. 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Physical principles of operation of the photodetecting devices based on the group III-doped IV-VI semiconductors are presented. We report on the performance of lead telluride-based single direct terahertz detectors. Architecture of a system for passive terahertz vision of room-temperature objects is presented.
  • Keywords
    IV-VI semiconductors; lead compounds; photodetectors; terahertz wave detectors; tin compounds; Ill-doped IV-VI semiconductors; Pb1-xSnxTe(In); lead telluride-based single direct terahertz detectors; passive terahertz photodetecting devices; passive terahertz vision; room-temperature objects; Detectors; Doping; Impurities; Lead; Photoconductivity; Sensitivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
  • Conference_Location
    Houston, TX
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4577-0510-6
  • Electronic_ISBN
    2162-2027
  • Type

    conf

  • DOI
    10.1109/irmmw-THz.2011.6104934
  • Filename
    6104934
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2673068