DocumentCode
2673197
Title
Relevance of P-Channel MOSFETs in Current and Future Applications
Author
Diaz-Valdivieso, Aranzazu ; Ahlers, Dirk ; Deboy, Gerald
Author_Institution
Infineon Technologies AG, Munich, Germany.
fYear
2006
fDate
Aug. 30 2006-Sept. 1 2006
Firstpage
1983
Lastpage
1987
Abstract
P-Channel MOSFETs are well known for their physical limitations compared to the N-Channel MOSFETs. Hole mobility is around three times smaller than electron mobility. Therefore a larger active area is necessary to achieve the same RDS(ON), thus making P-Channel devices more expensive. But they are equally known for their simplicity of usage. For applications in which a high side switch is needed, P-Channel MOSFET are the easiest option for their simple driver IC architecture and simple external circuitry, reducing the number of elements in the system. In this paper we will analyze the current and future usage of P-Channel MOSFETs.
Keywords
Battery management systems; Buck converters; Chemistry; Energy management; MOSFETs; Power system management; Switches; Switching circuits; Switching frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Motion Control Conference, 2006. EPE-PEMC 2006. 12th International
Conference_Location
Portoroz
Print_ISBN
1-4244-0121-6
Type
conf
DOI
10.1109/EPEPEMC.2006.4778697
Filename
4778697
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