• DocumentCode
    2673197
  • Title

    Relevance of P-Channel MOSFETs in Current and Future Applications

  • Author

    Diaz-Valdivieso, Aranzazu ; Ahlers, Dirk ; Deboy, Gerald

  • Author_Institution
    Infineon Technologies AG, Munich, Germany.
  • fYear
    2006
  • fDate
    Aug. 30 2006-Sept. 1 2006
  • Firstpage
    1983
  • Lastpage
    1987
  • Abstract
    P-Channel MOSFETs are well known for their physical limitations compared to the N-Channel MOSFETs. Hole mobility is around three times smaller than electron mobility. Therefore a larger active area is necessary to achieve the same RDS(ON), thus making P-Channel devices more expensive. But they are equally known for their simplicity of usage. For applications in which a high side switch is needed, P-Channel MOSFET are the easiest option for their simple driver IC architecture and simple external circuitry, reducing the number of elements in the system. In this paper we will analyze the current and future usage of P-Channel MOSFETs.
  • Keywords
    Battery management systems; Buck converters; Chemistry; Energy management; MOSFETs; Power system management; Switches; Switching circuits; Switching frequency; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Motion Control Conference, 2006. EPE-PEMC 2006. 12th International
  • Conference_Location
    Portoroz
  • Print_ISBN
    1-4244-0121-6
  • Type

    conf

  • DOI
    10.1109/EPEPEMC.2006.4778697
  • Filename
    4778697