DocumentCode
2673868
Title
Comparison of GaAs and silicon synchronous rectifiers in a 3.3 V out, 50 W DC-DC converter
Author
Niemela, Van A. ; Bowman, Wayne C.
Author_Institution
Lucent Technol., Bell Labs., Mesquite, TX, USA
Volume
1
fYear
1996
fDate
23-27 Jun 1996
Firstpage
861
Abstract
An experimental GaAs vertical FET is compared to a state-of-the-art silicon MOSFET for low-voltage synchronous rectification. Laboratory data show GaAs to perform significantly better, and a normalized cost analysis reveals that the GaAs VFET can potentially offer higher performance at lower cost than silicon
Keywords
AC-DC power convertors; DC-DC power convertors; III-V semiconductors; economics; elemental semiconductors; field effect transistor switches; gallium arsenide; power MOSFET; power field effect transistors; power semiconductor switches; rectifying circuits; semiconductor device manufacture; semiconductor device testing; silicon; 3.3 V; 50 W; DC-DC power converter; GaAs; LV synchronous rectification; MOSFET; Si; VFET; cost analysis; performance tests; state-of-the-art; synchronous rectifiers; vertical FET; Capacitance; Circuits; Costs; DC-DC power converters; Diodes; FETs; Gallium arsenide; Rectifiers; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location
Baveno
ISSN
0275-9306
Print_ISBN
0-7803-3500-7
Type
conf
DOI
10.1109/PESC.1996.548682
Filename
548682
Link To Document