Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection

Author

Zhang, L.Q. ; Alimi, Y. ; Balocco, C. ; Zhao, H. ; Westlund, A. ; Moschetti, G. ; Nilsson, P. -Å ; Grahn, J. ; Song, A.M.

Author_Institution

Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester, UK

fYear

2011

fDate

2-7 Oct. 2011

Firstpage

1

Lastpage

2

Abstract

We report on the fabrication of unipolar nanodiodes into an InAs/Al_xGa_1-xSb quantum-well heterostructure for room temperature microwave detection up to 110 GHz. Electron-beam lithography was combined with both dry- and wet-etching, and we explored the differences in the electric and detection parameters with the two methods.

Keywords

III-V semiconductors; aluminium compounds; electron beam lithography; etching; gallium compounds; indium compounds; microwave detectors; millimetre wave diodes; nanoelectronics; quantum well devices; InAs-Al_xGa_1-xSb; detection parameters; dry etching; electric parameters; electron beam lithography; quantum well heterostructure; room temperature microwave detection; temperature 293 K to 298 K; unipolar nanodiode fabrication; wet etching; Etching; Fabrication; Microwave devices; Substrates; Temperature; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on

Conference_Location

Houston, TX

ISSN

2162-2027

Print_ISBN

978-1-4577-0510-6

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/irmmw-THz.2011.6104983

Filename

6104983