Title :
Effects of the carrier density on the THz-induced nonlinearity in photoexcited GaAs
Author :
Sharma, G. ; Hafez, H. ; Al-Naib, I. ; Morandotti, R. ; Ozaki, T.
Author_Institution :
Adv. Laser Light Source, Univ. du Quebec, Varennes, QC, Canada
Abstract :
We investigate the effects of electron carrier density on the nonlinear response of photoexcited GaAs, illuminated by intense terahertz fields. We use the optical-pump/THz-probe technique, and explain our experimental results with an intervalley-scattering-based model.
Keywords :
III-V semiconductors; carrier density; gallium arsenide; high-frequency effects; optical pumping; GaAs; THz-induced nonlinearity; THz-probe method; electron carrier density; intervalley-scattering-based model; nonlinear response; optical-pump method; photoexcited gallium arsenide; terahertz fields; Charge carrier density; Charge carrier processes; Gallium arsenide; Nonlinear optics; Optical pulses; Optical pumping; Scattering;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6105005
