DocumentCode :
267442
Title :
T-type IGBT module with new voltage class authentic RB-IGBT for DC-1000V solar inverter application
Author :
Xiang, Danyi ; Kakefu, Mitsuhiro ; Mutsumi, Sawada ; Otsuki, Masahito
Author_Institution :
Applic. Eng. Dept., Fuji Electr. (China) Co. Ltd., Shanghai, China
fYear :
2014
fDate :
5-8 Nov. 2014
Firstpage :
1393
Lastpage :
1396
Abstract :
This paper describes newly developed T-type full-leg IGBT modules, specifically designed for mega-solar inverter application of higher DC-input voltage, such as DC 1000V input. The newly developed 900V voltage class authentic RB-IGBTs are installed in the power module, which have significant advantages in switching performance when compared to the alternative method 1200V standard IGBT and reverse blocking diode cascade. The 1200V-900A full-T-leg high power IGBT module demonstrations will be discussed.
Keywords :
insulated gate bipolar transistors; invertors; solar power; T-type full-leg high power IGBT modules; current 900 A; higher DC-input voltage; megasolar inverter application; reverse blocking diode cascade; switching performance; voltage 1000 V; voltage 1200 V; voltage 900 V; voltage class authentic RB-IGBT; Insulated gate bipolar transistors; Pulse width modulation; Switches; RB-IGBT; Solar Inverter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Application Conference and Exposition (PEAC), 2014 International
Conference_Location :
Shanghai
Type :
conf
DOI :
10.1109/PEAC.2014.7038068
Filename :
7038068
Link To Document :
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