Title :
Modeling RF Signal Propagation Along On-Chip Interconnects and the Effect of Substrate Doping with the Alternating-Direction-Implicit Finite-Difference Time-Domain (ADI-FDTD) Method
Author :
Yang, Bo ; Shao, Xi ; Goldsman, Neil ; Ramahi, Omar M.
Author_Institution :
Dept. of Electr. & Compt. Eng., Maryland Univ., College Park, MD
Abstract :
The alternating-direction-implicit finite-difference time-domain (ADI-FDTD) method is used to analyze metal-insulator-semiconductor-metal interconnects by solving Maxwell´s equations in the time domain. This analysis shows that the silicon substrate losses and the metal line losses can be modeled with high resolution. Our modeling method is supported by experimental data. We find that semiconductors readily operate in the slow wave mode and skin-effect mode for selected doping densities. The ADI-FDTD method is also applied to study the effect of epitaxial layers in different propagating modes. Simulation indicates that inserting epitaxial layers in highly doped substrates should help to keep the signal integrities and reduce substrate noise
Keywords :
MIS devices; Maxwell equations; finite difference time-domain analysis; integrated circuit interconnections; integrated circuit modelling; radiowave propagation; semiconductor doping; semiconductor epitaxial layers; silicon; skin effect; ADI-FDTD; Maxwell equation; RF signal propagation; alternating-direction-implicit method; doping density; epitaxial layer; finite-difference time-domain method; integrated circuit; metal line losses; metal-insulator-semiconductor-metal interconnect; on-chip interconnect; silicon substrate losses; skin-effect mode; slow wave mode; substrate doping; Epitaxial layers; Finite difference methods; Maxwell equations; Metal-insulator structures; Noise reduction; Semiconductor device doping; Semiconductor process modeling; Silicon; Substrates; Time domain analysis; ADI-FDTD; doping density; interconnect; silicon substrate noise; skin-effect mode; slow wave mode;
Conference_Titel :
Power Modulator Symposium, 2006. Conference Record of the 2006 Twenty-Seventh International
Conference_Location :
Arlington, VA
Print_ISBN :
1-4244-0018-X
Electronic_ISBN :
1-4244-0019-8
DOI :
10.1109/MODSYM.2006.365209
