Title :
Hydrogen effects on GaAs microwave semiconductors
Author :
Ragle, Dwayne ; Kayali, Sammy
Author_Institution :
Shason Microwave Corp., Houston, TX, USA
Abstract :
This presentation will describe and summarize a report which documents all published hydrogen effects work performed through 1997. The report is based on a literature search for hydrogen effects on GaAs devices and interviews with several persons noted for their work on this problem, and is a compilation of hydrogen effects data and references in a single document. Included in the presentation will be an outline of the problem history, a summary and comparison of failure effects observed on devices (MESFET, PHEMT, and InP HEMT), a review of hydrogen sources in hermetic packages, proposed solutions to the problem and recommendations for use of these devices in space and other high reliability applications
Keywords :
III-V semiconductors; gallium arsenide; hydrogen; microwave field effect transistors; semiconductor device packaging; semiconductor device reliability; GaAs; GaAs microwave semiconductor; H2; HEMT; MESFET; PHEMT; failure; hermetic package; hydrogen gas; reliability; space device; Drives; Gallium arsenide; Hydrogen; Integrated circuit packaging; Laboratories; MMICs; Monolithic integrated circuits; NASA; Propulsion; Semiconductor device packaging;
Conference_Titel :
GaAs Reliability Workshop, 1997., Proceedings
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7908-0064-0
DOI :
10.1109/GAASRW.1997.656128
