• DocumentCode
    2674584
  • Title

    Octal to binary conversion using multi-input floating gate complementary metal oxide semiconductors

  • Author

    Osseily, Hassan Amine ; Haidar, Ali Massoud

  • Author_Institution
    Dept. of Electr., Beirut Arab Univ. Beirut, Beirut, Lebanon
  • fYear
    2011
  • fDate
    June 30 2011-July 1 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Multiple-input floating gate MIFG-MOSFETs and Floating Gate Potential Diagrams FPD used for conversion of quaternary-valued input and octal-valued input into corresponding binary-valued output in CMOS integrated circuit design environment. The method is demonstrated through the design of a circuit for conversion of quaternary quats into the corresponding binary bits (binary 00-11) and for conversion of octal octets into the corresponding binary bits (binary 000-111) in a standard 1.5μm digital CMOS technology. The novelty of this method is the simplicity of conversion where the output of the convertor can be directly connected to the binary CMOS circuits without the need of any interface due the compatibility of this convertor with the present CMOS process.
  • Keywords
    CMOS digital integrated circuits; integrated circuit design; CMOS integrated circuit design; MIFG-MOSFET; digital CMOS technology; floating gate potential diagram; multiinput floating gate complementary metal oxide semiconductor; octal to binary conversion; octal valued input; quaternary quats conversion; quaternary valued input; size 1.5 mum; CMOS integrated circuits; Capacitors; Electric potential; Inverters; Logic gates; Switches; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Signals, Circuits and Systems (ISSCS), 2011 10th International Symposium on
  • Conference_Location
    lasi
  • Print_ISBN
    978-1-61284-944-7
  • Type

    conf

  • DOI
    10.1109/ISSCS.2011.5978644
  • Filename
    5978644