DocumentCode
2674584
Title
Octal to binary conversion using multi-input floating gate complementary metal oxide semiconductors
Author
Osseily, Hassan Amine ; Haidar, Ali Massoud
Author_Institution
Dept. of Electr., Beirut Arab Univ. Beirut, Beirut, Lebanon
fYear
2011
fDate
June 30 2011-July 1 2011
Firstpage
1
Lastpage
4
Abstract
Multiple-input floating gate MIFG-MOSFETs and Floating Gate Potential Diagrams FPD used for conversion of quaternary-valued input and octal-valued input into corresponding binary-valued output in CMOS integrated circuit design environment. The method is demonstrated through the design of a circuit for conversion of quaternary quats into the corresponding binary bits (binary 00-11) and for conversion of octal octets into the corresponding binary bits (binary 000-111) in a standard 1.5μm digital CMOS technology. The novelty of this method is the simplicity of conversion where the output of the convertor can be directly connected to the binary CMOS circuits without the need of any interface due the compatibility of this convertor with the present CMOS process.
Keywords
CMOS digital integrated circuits; integrated circuit design; CMOS integrated circuit design; MIFG-MOSFET; digital CMOS technology; floating gate potential diagram; multiinput floating gate complementary metal oxide semiconductor; octal to binary conversion; octal valued input; quaternary quats conversion; quaternary valued input; size 1.5 mum; CMOS integrated circuits; Capacitors; Electric potential; Inverters; Logic gates; Switches; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Signals, Circuits and Systems (ISSCS), 2011 10th International Symposium on
Conference_Location
lasi
Print_ISBN
978-1-61284-944-7
Type
conf
DOI
10.1109/ISSCS.2011.5978644
Filename
5978644
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