DocumentCode :
2674584
Title :
Octal to binary conversion using multi-input floating gate complementary metal oxide semiconductors
Author :
Osseily, Hassan Amine ; Haidar, Ali Massoud
Author_Institution :
Dept. of Electr., Beirut Arab Univ. Beirut, Beirut, Lebanon
fYear :
2011
fDate :
June 30 2011-July 1 2011
Firstpage :
1
Lastpage :
4
Abstract :
Multiple-input floating gate MIFG-MOSFETs and Floating Gate Potential Diagrams FPD used for conversion of quaternary-valued input and octal-valued input into corresponding binary-valued output in CMOS integrated circuit design environment. The method is demonstrated through the design of a circuit for conversion of quaternary quats into the corresponding binary bits (binary 00-11) and for conversion of octal octets into the corresponding binary bits (binary 000-111) in a standard 1.5μm digital CMOS technology. The novelty of this method is the simplicity of conversion where the output of the convertor can be directly connected to the binary CMOS circuits without the need of any interface due the compatibility of this convertor with the present CMOS process.
Keywords :
CMOS digital integrated circuits; integrated circuit design; CMOS integrated circuit design; MIFG-MOSFET; digital CMOS technology; floating gate potential diagram; multiinput floating gate complementary metal oxide semiconductor; octal to binary conversion; octal valued input; quaternary quats conversion; quaternary valued input; size 1.5 mum; CMOS integrated circuits; Capacitors; Electric potential; Inverters; Logic gates; Switches; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Signals, Circuits and Systems (ISSCS), 2011 10th International Symposium on
Conference_Location :
lasi
Print_ISBN :
978-1-61284-944-7
Type :
conf
DOI :
10.1109/ISSCS.2011.5978644
Filename :
5978644
Link To Document :
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