DocumentCode
2674586
Title
Pulsed High-Voltage Modulators Using Power Semiconductor Devices
Author
Jiang, W. ; Nakahiro, K. ; Honma, H. ; Shimizu, N. ; Yoshida, S. ; Nakanishi, K. ; Sugiyama, A. ; Wake, M. ; Takayama, K.
Author_Institution
Nagaoka Univ. of Technol., Niigata
fYear
2006
fDate
14-18 May 2006
Firstpage
220
Lastpage
223
Abstract
Pulsed high-voltage modulators have been developed by using different kinds of power semiconductor devices. MOSFET, SIThy, and SiC-JFET are studied in switching characteristics for applications in MHz high-voltage modulators, which are expected to have applications in power supplies for particle accelerators
Keywords
field effect transistor switches; particle accelerators; power semiconductor switches; power supplies to apparatus; pulsed power supplies; silicon compounds; MOSFET; SIThy; SiC; SiC-JFET; particle accelerators; power semiconductor devices; power supplies; pulsed high-voltage modulators; switching characteristics; MOSFET circuits; Power MOSFET; Power semiconductor devices; Power semiconductor switches; Power supplies; Pulse modulation; Pulsed power supplies; Semiconductor devices; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Modulator Symposium, 2006. Conference Record of the 2006 Twenty-Seventh International
Conference_Location
Arlington, VA
Print_ISBN
1-4244-0018-X
Electronic_ISBN
1-4244-0019-8
Type
conf
DOI
10.1109/MODSYM.2006.365222
Filename
4216174
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