Title :
Sub-micron quantum cascade transistor
Author :
Van, H. Nguyen ; Moreno, J.C. ; Baranov, A.N. ; Zaknoune, M. ; Teissier, R.
Author_Institution :
Inst. d´´Electron. du Sud, Univ. Montpellier 2, Montpellier, France
Abstract :
A sub-micron process for the fabrication of an original unipolar vertical transport transistor is reported. This allowed suppressing parasitic resistances and achieving high current densities required for THz frequency operation.
Keywords :
III-V semiconductors; aluminium compounds; current density; indium compounds; transistors; InAs-AlSb; THz frequency operation; current density; parasitic resistances suppression; submicron quantum cascade transistor; unipolar vertical transport transistor; Current density; Fabrication; Heterojunction bipolar transistors; Quantum cascade lasers; Resistance; Substrates;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6105027
