DocumentCode
2674760
Title
Millimetre Wave Low Noise E-Plane Balanced Mixers Incorporating Planar MBE GaAs Mixer Diodes
Author
Bates, R.N. ; Surridge, R.K. ; Summers, J.G.
fYear
1982
fDate
15-17 June 1982
Firstpage
13
Lastpage
15
Abstract
Planar GaAs Mott mixer diodes have been made for use in novel E-plane balanced mixers at 35 and 85 GHz. Single sideband noise figures of 6 dB at 35 GHz and 7.5 dB at 85 GHz (including 1 dB I.F. contribution) have been achieved. Both devices and circuits are suitable for low cost, high volume applications.
Keywords
Bonding; Circuits; Costs; Finline; Frequency; Gallium arsenide; Light emitting diodes; Molecular beam epitaxial growth; Schottky diodes; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location
Dallas, TX, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1982.1130592
Filename
1130592
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