Title :
The Gap Diode: A New High Frequency Mixer and Detector
Author :
Teng, S.J.J. ; Chen, P. ; Rosenbaum, F.J. ; Goldwasser, R.E.
Abstract :
A new metal-semiconductor device is reported whose I-V characteristic is controlled by a geometric gap between adjacent Schottky barrier regions. An improved performance low turn-on votlage GaAs diode is demonstrated at 10 through 70 GHz.
Keywords :
Cathodes; Detectors; Frequency; Gallium arsenide; Neck; Schottky barriers; Schottky diodes; Semiconductor diodes; Temperature dependence; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MWSYM.1982.1130596
