DocumentCode
2674829
Title
The Gap Diode: A New High Frequency Mixer and Detector
Author
Teng, S.J.J. ; Chen, P. ; Rosenbaum, F.J. ; Goldwasser, R.E.
fYear
1982
fDate
15-17 June 1982
Firstpage
24
Lastpage
26
Abstract
A new metal-semiconductor device is reported whose I-V characteristic is controlled by a geometric gap between adjacent Schottky barrier regions. An improved performance low turn-on votlage GaAs diode is demonstrated at 10 through 70 GHz.
Keywords
Cathodes; Detectors; Frequency; Gallium arsenide; Neck; Schottky barriers; Schottky diodes; Semiconductor diodes; Temperature dependence; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location
Dallas, TX, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1982.1130596
Filename
1130596
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