DocumentCode
2674989
Title
High-Power 2-9 GHz Solid State Switch
Author
Kintigh, D.W. ; Niblack, W.K.
fYear
1982
fDate
15-17 June 1982
Firstpage
54
Lastpage
56
Abstract
A fast high power solid state switch has been developed using optimized epitaxial silicon PIN chips. It is capable of switching over 360 watts of CW of power from 2-9 GHz and switching in 400 ns.
Keywords
Capacitance; Communication switching; Impedance; Power system harmonics; Radio frequency; Semiconductor diodes; Solid state circuits; Switches; Temperature; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location
Dallas, TX, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1982.1130607
Filename
1130607
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