DocumentCode :
2674998
Title :
Analysis of Repetitive Pulse Discharge System for Plasma Source Ion Implantation
Author :
Chung, K.J. ; Choe, J.M. ; Hwang, H.D. ; Kim, G.H. ; Ko, K.C. ; Hwang, Y.S.
Author_Institution :
Dept. of Nucl. Eng., Seoul Nat. Univ.
fYear :
2006
fDate :
14-18 May 2006
Firstpage :
329
Lastpage :
332
Abstract :
The analysis of the repetitive pulse discharge system for the plasma source ion implantation is investigated with both circuit simulation and experiment. In the circuit model, the ion and electron currents on a target are self-consistently varied with the applied voltage because the waveforms of repetitive pulse are affected by the internal properties of plasma, as well as the external circuit parameters. The circuit simulation reveals that not only the plasma properties, but also the circuit components, are important for pulse system to operate at high repetition-rate. The experiments are conducted with a plane electrode immersed in rf-driven argon plasmas. When negative high-voltage pulses are applied to the electrode, the current and voltage waveforms are measured and compared with the simulation results. Control parameters for high repetition-rate operation are discussed, based on the self-consistent circuit analysis of the pulse system
Keywords :
argon; discharges (electric); ion implantation; plasma sources; pulsed power technology; circuit simulation; ion implantation; plane electrode; plasma source; repetitive pulse discharge; rf-driven argon plasma; Circuit simulation; Fault location; Ion implantation; Plasma immersion ion implantation; Plasma properties; Plasma simulation; Plasma sources; Plasma waves; Pulse circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Modulator Symposium, 2006. Conference Record of the 2006 Twenty-Seventh International
Conference_Location :
Arlington, VA
Print_ISBN :
1-4244-0018-X
Electronic_ISBN :
1-4244-0019-8
Type :
conf
DOI :
10.1109/MODSYM.2006.365250
Filename :
4216202
Link To Document :
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