DocumentCode
2675052
Title
Non Linear Equivalent Circuit For Broadband GaAs MESFET Power Amplifier Design
Author
Soares, Rafael ; Goudelis, M. ; Loriou, B. ; de Los, E. ; Devo, R.
fYear
1982
fDate
15-17 June 1982
Firstpage
63
Lastpage
65
Abstract
A non-linear equivalent circuit is developed to model the fundamental frequency r.f. performance of a 1µm x 800 µm GaAs MESFET, based on two-port large-signal amplifier measurements between 6-8 GHz. Potentially larqe-band, the circuit accurately predicts in-band AM/PM conversion and saturation of the device with arbitrary terminal loads.
Keywords
Broadband amplifiers; Distortion measurement; Equivalent circuits; Frequency measurement; Gallium arsenide; MESFET circuits; Power amplifiers; Power measurement; Scattering parameters; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location
Dallas, TX, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1982.1130610
Filename
1130610
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