DocumentCode
2675093
Title
Ultrafast photoconductors based on plasmonic gratings
Author
Berry, Christopher W. ; Jarrahi, Mona
Author_Institution
EECS Dept., Univ. of Michigan, Ann Arbor, MI, USA
fYear
2011
fDate
2-7 Oct. 2011
Firstpage
1
Lastpage
2
Abstract
We present an ultrafast photoconductor that offers significantly higher quantum efficiencies compared to conventional photoconductors. The ultrafast response is achieved by excitation of surface plasmon waves, localizing a major portion of the incident light near photoconductor contact electrodes.
Keywords
III-V semiconductors; diffraction gratings; gallium arsenide; gold; high-speed optical techniques; indium compounds; photoconducting materials; photoconductivity; plasmonics; semiconductor-metal boundaries; surface plasmons; In0.53Ga0.47As-Au; photoconductor contact electrodes; photocurrent; plasmonic gratings; quantum efficiency; surface plasmon wave excitation; ultrafast photoconductors; Electrodes; Gratings; Optical device fabrication; Photoconducting materials; Plasmons; Substrates; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location
Houston, TX
ISSN
2162-2027
Print_ISBN
978-1-4577-0510-6
Electronic_ISBN
2162-2027
Type
conf
DOI
10.1109/irmmw-THz.2011.6105050
Filename
6105050
Link To Document