DocumentCode
2675108
Title
L-Band Si Power V-FET
Author
Chen Xian-e ; Zhao Ping-hai ; Qian Wen-rui
fYear
1982
fDate
15-17 June 1982
Firstpage
74
Lastpage
76
Abstract
A new structure Si vertical channel FET ---- the covered gate structure has been developed. Compared with the buried gate structure, an increasing power gain by more than 5 dB has been obtained . L-band devices with output power higher than 10W, power gain 6 dB at 1GHz have been fabricated. The relationship between the electrical properties and devices structure parameters are discussed. The excellent temperature performance and other characteristics are reported.
Keywords
Capacitance; Dielectric substrates; FETs; Flyback transformers; Frequency; L-band; Roentgenium; Silicon; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location
Dallas, TX, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1982.1130614
Filename
1130614
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