Title :
Silicon CMOS-transistor-based detection up to 4.25 THz
Author :
Boppel, S. ; Lisauskas, A. ; Seliuta, D. ; Minkevicius, L. ; Kasalynas, I. ; Valusis, G. ; Krozer, V. ; Roskos, H.G.
Author_Institution :
Phys. Inst., Johann Wolfgang Goethe-Univ. Frankfurt, Frankfurt, Germany
Abstract :
We report on the performance of silicon CMOS-transistor-based plasmonic THz detectors up to 4.25 THz. Room-temperature responsivity values of 1011 V/W at 584 GHz, 90 V/W at 3.125 THz and 11 V/W at 4.25 THz are reported. When cooled down to 20 K a maximum responsivity of 3.47 kV/W and a noise-equivalent power of 3 pW/√Hz are reached.
Keywords :
MOSFET; elemental semiconductors; plasmonics; semiconductor counters; silicon; submillimetre wave detectors; terahertz wave detectors; CMOS- transistor-based plasmonic THz detector; Si; frequency 3.125 THz; frequency 4.25 THz; frequency 584 GHz; temperature 20 K; temperature 293 K to 298 K; Antennas; CMOS integrated circuits; Cutoff frequency; Detectors; Resonant frequency; Silicon; Transistors;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location :
Houston, TX
Print_ISBN :
978-1-4577-0510-6
Electronic_ISBN :
2162-2027
DOI :
10.1109/irmmw-THz.2011.6105056
