• DocumentCode
    2675184
  • Title

    Extended interaction sources above 220 GHz

  • Author

    Dobbs, Richard ; Steer, Brian

  • Author_Institution
    Commun. & Power Ind. Canada, Inc., Georgetown, ON, Canada
  • fYear
    2011
  • fDate
    2-7 Oct. 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given. CPI Canada have produced EIKs and EIOs at frequencies up to 220 GHz. Recent development programs have demonstrated that the technology exists to design and build Extended Interaction devices at low THz frequencies. This paper describes current and predicted performance of these devices, the design challenges and solutions to enable this performance.
  • Keywords
    klystrons; network synthesis; submillimetre wave oscillators; EIK; EIO; extended interaction device; extended interaction klystron; extended interaction oscillator; extended interaction source; low THz frequency; Cavity resonators; Electron beams; Fabrication; Focusing; Klystrons; Performance evaluation; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
  • Conference_Location
    Houston, TX
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4577-0510-6
  • Electronic_ISBN
    2162-2027
  • Type

    conf

  • DOI
    10.1109/irmmw-THz.2011.6105059
  • Filename
    6105059
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2675184