Title :
Modeling of hydrogen effects in GaAs FETs
Author :
Mutha, Rahul R. ; Rancour, David P. ; Kayali, Sammy A. ; Anderson, Wallace T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., North Dartmouth, MA, USA
Abstract :
Hydrogen contamination of GaAs devices has been a major concern for quite some time. In this paper we model the effects of Hydrogen on GaAs FETs. We use a numerical approach to solve the diffusion equations of Hydrogen into the device. The resulting Silicon doping profiles obtained by these calculations are used as input data for a Monte Carlo device simulation code. From the Silicon profiles it is concluded that silicon passivation is greater at lower temperatures. Hydrogen saturation occurs at higher temperatures
Keywords :
III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; diffusion; doping profiles; gallium arsenide; hydrogen; passivation; semiconductor device models; GaAs FET; GaAs:Si,H; Monte Carlo device simulation; diffusion; hydrogen contamination; numerical model; passivation; silicon doping profile; Contamination; Doping profiles; Equations; FETs; Gallium arsenide; Hydrogen; Monte Carlo methods; Semiconductor process modeling; Silicon; Temperature;
Conference_Titel :
GaAs Reliability Workshop, 1997., Proceedings
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7908-0064-0
DOI :
10.1109/GAASRW.1997.656133
