The electrical properties of MOS-structures with silicon nanoballs incrusted in SiO2 layer

Series of nanopowder were manufactured, for which peak was observed in Raman´s spectrum. That peak corresponds to Raman scattering on monocrystalline silicon. In photoluminescence spectra broad peaks were observed. That peaks covers range from red to blue. MOS-structures with nanoballs incrusted in SiO₂ were manufactured. For those structures, differential Voltage-Capacity (C-V) and Conductivity characteristics with frequency and structure variety were obtained. Significant increase of differential capacity in an accumulation region was observed. Frequency dependence is obvious. Also Static volt-ampere characteristic was obtained with dependence of Temperature and lighting of a sample. Characteristics have diode type. Photo effect observed at room temperature.