Title :
The electrical properties of MOS-structures with silicon nanoballs incrusted in SiO2 layer
Author :
Voshchenkov, Artyom A. ; Efremov, Mikhail D. ; Antonenko, Alexander H. ; Kamayev, Gennady H. ; Volodin, Vladimir A. ; Arzhannikova, Sofia A. ; Vishnyakov, Aleksey V. ; Marin, Denis V. ; Gismatulin, Andrey A.
Author_Institution :
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
Abstract :
Series of nanopowder were manufactured, for which peak was observed in Raman´s spectrum. That peak corresponds to Raman scattering on monocrystalline silicon. In photoluminescence spectra broad peaks were observed. That peaks covers range from red to blue. MOS-structures with nanoballs incrusted in SiO2 were manufactured. For those structures, differential Voltage-Capacity (C-V) and Conductivity characteristics with frequency and structure variety were obtained. Significant increase of differential capacity in an accumulation region was observed. Frequency dependence is obvious. Also Static volt-ampere characteristic was obtained with dependence of Temperature and lighting of a sample. Characteristics have diode type. Photo effect observed at room temperature.
Keywords :
MIS structures; Raman spectra; electrical conductivity; elemental semiconductors; nanoparticles; photoluminescence; semiconductor-insulator boundaries; silicon; silicon compounds; Raman scattering; Raman spectrum; Si-SiO2; conductivity; electrical properties; nanoballs; nanopowder; photoluminescence spectra; room temperature; wide-band gap material; Capacitance-voltage characteristics; Conductivity; Diodes; Frequency dependence; Manufacturing; Photoluminescence; Raman scattering; Silicon; Temperature dependence; Voltage; C-V; MOS-structures; Nanocrystal; nanoballs; nanopowder; silicon;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173913
