Title :
Investigation of recombination of nonequilibrium charge carriers in InAs
Author :
Kesler, Valeriy G. ; Gorbunov, Andrei V.
Author_Institution :
Inst. of Semicond. Phys. SB RAS, Novosibirsk, Russia
Abstract :
This work is devoted to the development of method for determination of life time and surface recombination rate in epitaxial layers of indium arsenide. The determination of relaxation parameters is based on modeling of nonequilibrium charge carriers recombination process under pulse laser exposure of semiconductor film surface and comparison of simulated and experimental curves of photoconductivity relaxation. The experimental photoconductivity relaxation curves were obtained by microwave (SHF) method.
Keywords :
III-V semiconductors; carrier lifetime; indium compounds; laser beam effects; photoconductivity; semiconductor epitaxial layers; surface recombination; InAs; carrier life time; epitaxial layers; microwave method; nonequilibrium charge carrier recombination; photoconductivity relaxation parameters; pulse laser exposure; semiconductor film surface; surface recombination rate; Charge carriers; Epitaxial layers; Indium; Laser modes; Masers; Optical pulses; Photoconductivity; Radiative recombination; Semiconductor lasers; Semiconductor process modeling; InAs; microwave; surface recombination;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173915
