Graphene plasmonics for terahertz applications

Graphene has emerged as the semiconductor with the highest reported mobility of carriers at room temperature making it suitable for terahertz applications. The plasmon frequencies of graphene are also in the terahertz range. Plasmons in graphene interact strongly with electrons and holes and plasmon emission and absorption are the fastest mechanisms for electron-hole recombination and generation. Plasmon density of states can be modified in patterned nanoscale graphene and thereby enabling one to control plasmon frequencies as well as carrier dynamics. We present terahertz spectroscopy results for carrier relaxation and recombination dynamics in graphene and discuss designs for terahertz plasmonic devices for practical applications.