Title :
Physic-technological principles for fabrication of multielement InSb- and InAs-based MIS IR-photodetectors
Author :
Kuryshev, Georgy L.
Author_Institution :
A.V. Rzhanov Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
Abstract :
The basic physico-technological principles of creating a perfect interface in MIS structures on InSb and InAs, and fabrication of IR-photodetectors, functioning under non-equilibrium depletion mode, on their base are formulated in the present contribution.
Keywords :
III-V semiconductors; MIS devices; indium compounds; infrared detectors; photodetectors; IR-photodetector fabrication; InAs; InSb; MIS structure; nonequilibrium depletion mode; physico-technological principle; Anodes; Chemical technology; Electrons; Fabrication; Fluctuations; Insulation; Oxidation; Photodetectors; Semiconductor device noise; Temperature; IR photodetectors; Interface; MIS-structure; generation process;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173919
