DocumentCode
2675364
Title
Physic-technological principles for fabrication of multielement InSb- and InAs-based MIS IR-photodetectors
Author
Kuryshev, Georgy L.
Author_Institution
A.V. Rzhanov Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fYear
2009
fDate
1-6 July 2009
Firstpage
29
Lastpage
31
Abstract
The basic physico-technological principles of creating a perfect interface in MIS structures on InSb and InAs, and fabrication of IR-photodetectors, functioning under non-equilibrium depletion mode, on their base are formulated in the present contribution.
Keywords
III-V semiconductors; MIS devices; indium compounds; infrared detectors; photodetectors; IR-photodetector fabrication; InAs; InSb; MIS structure; nonequilibrium depletion mode; physico-technological principle; Anodes; Chemical technology; Electrons; Fabrication; Fluctuations; Insulation; Oxidation; Photodetectors; Semiconductor device noise; Temperature; IR photodetectors; Interface; MIS-structure; generation process;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-4571-4
Type
conf
DOI
10.1109/EDM.2009.5173919
Filename
5173919
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