Kinetics of indium arsenide quantum dots formation on gallium arsenide (001) substrate

Author

Lyamkina, Anna A. ; Dmitriev, Dmitriy V. ; Moshchenko, Sergey P. ; Toropov, Alexander I.

Author_Institution

Novosibirsk State Univ., Novosibirsk, Russia

fYear

2009

fDate

1-6 July 2009

Firstpage

37

Lastpage

39

Abstract

Kinetics of quantum dots (QDs) formation in droplet epitaxy is investigated. Optimal growth parameter values are specified for deposited indium amount and growth interruption. It is shown that droplet epitaxy allows to decrease QDs density by an order of magnitude and get spectrum red-shift in comparison with Stranski-Krastanov method. As it follows from spectra analysis, growth interruption increase results in the increase of a ratio large QDs peaks area/small QDs peaks area which indicates that there are transient processes with material redistribution.

Keywords

III-V semiconductors; drops; gallium arsenide; indium compounds; molecular beam epitaxial growth; red shift; semiconductor growth; semiconductor quantum dots; GaAs; InAs-GaAs; Stranski-Krastanov method; deposition technique; droplet epitaxy; gallium arsenide (001) substrate; molecular beam epitaxy; optimal growth; quantum dot kinetic curve; red-shift; spectral analysis; transient process; Atomic layer deposition; Epitaxial growth; Gallium arsenide; Indium; Kinetic theory; Nanostructures; Quantum computing; Quantum dots; Substrates; Surface morphology; Quantum dot; droplet epitaxy; growth interruption; kinetic curve;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-4571-4

Type

conf

DOI

10.1109/EDM.2009.5173921

Filename

5173921