Two-stage nucleation of indium droplets on GaAs (001) substrate

Author

Lyamkina, Anna A. ; Galitsyn, Yuri G. ; Dmitriev, Dmitriy V. ; Moshchenko, Sergey P. ; Toropov, Alexander I.

Author_Institution

Novosibirsk State Univ., Novosibirsk, Russia

fYear

2009

fDate

1-6 July 2009

Firstpage

40

Lastpage

42

Abstract

The indium drops formation on GaAs as initial stage of droplet epitaxy was investigated. The drop density of 5ldr10⁷ cm^-2 allows to produce low-density quantum dots. Well-defined bimodal character of height distribution is revealed. We suppose that additional nucleation centers appeared on the surface during indium deposition time. They are supposed to be surface defects caused by arsenic evaporation from GaAs. The time of defect appearing was estimated on the base of two dot groups volume difference.

Keywords

III-V semiconductors; drops; epitaxial layers; evaporation; gallium arsenide; indium; molecular beam epitaxial growth; nucleation; semiconductor quantum dots; GaAs; GaAs (001) substrate; In; arsenic evaporation; bimodal character; drop density; indium droplet epitaxy; molecular beam epitaxial growth; nucleation; quantum dots; surface defects; Atomic force microscopy; Epitaxial growth; Gallium arsenide; Image analysis; Indium; Information analysis; Quantum dots; Statistical distributions; Substrates; Surface morphology; Nucleation; epitaxy; quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-4571-4

Type

conf

DOI

10.1109/EDM.2009.5173922

Filename

5173922