DocumentCode
2675481
Title
Theory and design of Smith-Purcell semiconductor THz sources
Author
Smith, Don ; Belyanin, Alexey
Author_Institution
Dept. of Phys. & Astron., Texas A&M Univ., College Station, TX, USA
fYear
2011
fDate
2-7 Oct. 2011
Firstpage
1
Lastpage
2
Abstract
We recently proposed a room-temperature semiconductor THz source that operates via Smith-Purcell radiation of Gunn domains. We present simulation results of an optimized narrowband design that generates 0.4mW at 0.3THz and 1.1uW at 2.5THz and discuss preliminary results towards the design of a room-temperature chip-scale THz synthesizer.
Keywords
Gunn diodes; submillimetre wave diodes; Gunn domain; Smith-Purcell radiation; frequency 0.3 THz; frequency 2.5 THz; power 0.4 mW; power 1.1 muW; room-temperature semiconductor THz source; temperature 293 K to 298 K; Electric fields; Frequency domain analysis; Gratings; Materials; Semiconductor diodes; Synthesizers; Time domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location
Houston, TX
ISSN
2162-2027
Print_ISBN
978-1-4577-0510-6
Electronic_ISBN
2162-2027
Type
conf
DOI
10.1109/irmmw-THz.2011.6105075
Filename
6105075
Link To Document