The kinetics of negative 2D-islands on Si (111) surface during sublimation

Author

Sitnikov, Sergey V. ; Kosolobov, Sergey S. ; Latyshev, Alexander V.

Author_Institution

A.V. Rzhanov Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia

fYear

2009

fDate

1-6 July 2009

Firstpage

56

Lastpage

58

Abstract

Kinetics of two dimensional islands on Si(111) was investigated by in situ ultrahighvacuum reflection electron microscopy during sublimation. The temperature dependences of critical radius of the terrace for nucleation of new island were measured. On the base of the obtained data the adatom diffusion length on the Si(111) surface was estimated at temperature range 1000 - 1300degC.

Keywords

adsorbed layers; electron microscopy; elemental semiconductors; island structure; nucleation; silicon; sublimation; Si; Si (111) surface; adatom diffusion length; negative 2D-island kinetics; nucleation; sublimation; temperature 1000 C to 1300 C; temperature dependence; ultrahighvacuum reflection electron microscopy; Atomic layer deposition; Etching; Kinetic theory; Physics; Silicon; Spatial resolution; Substrates; Surface morphology; Temperature dependence; Temperature distribution; Silicon (111); migration length; sublimation; two dimensional island;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-4571-4

Type

conf

DOI

10.1109/EDM.2009.5173928

Filename

5173928