Title :
The kinetics of negative 2D-islands on Si (111) surface during sublimation
Author :
Sitnikov, Sergey V. ; Kosolobov, Sergey S. ; Latyshev, Alexander V.
Author_Institution :
A.V. Rzhanov Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
Abstract :
Kinetics of two dimensional islands on Si(111) was investigated by in situ ultrahighvacuum reflection electron microscopy during sublimation. The temperature dependences of critical radius of the terrace for nucleation of new island were measured. On the base of the obtained data the adatom diffusion length on the Si(111) surface was estimated at temperature range 1000 - 1300degC.
Keywords :
adsorbed layers; electron microscopy; elemental semiconductors; island structure; nucleation; silicon; sublimation; Si; Si (111) surface; adatom diffusion length; negative 2D-island kinetics; nucleation; sublimation; temperature 1000 C to 1300 C; temperature dependence; ultrahighvacuum reflection electron microscopy; Atomic layer deposition; Etching; Kinetic theory; Physics; Silicon; Spatial resolution; Substrates; Surface morphology; Temperature dependence; Temperature distribution; Silicon (111); migration length; sublimation; two dimensional island;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173928
