Title :
Monte carlo simulation of thin silicon dioxide layer evaporation
Author :
Usenkov, Stanislav V. ; Mzhelskiy, Ivan V. ; Shwartz, Nataliya L.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
Abstract :
Monte Carlo model of evaporation of thin oxide layer on silicon substrate was suggested. Algorithm of chemical reactions was modified to valid treatment of Si-SiO2 system. This improvement allows simulation of high-temperature evaporation of thin dioxide layers, and explains available experimental data.
Keywords :
Monte Carlo methods; annealing; desorption; evaporation; insulating thin films; reaction kinetics theory; silicon; silicon compounds; surface chemistry; Monte Carlo simulation; Si; Si-SiO2; annealing; chemical reactions; desorption; high-temperature evaporation; thin silicon dioxide layer; Annealing; Atomic layer deposition; Chemical products; Dielectric substrates; Energy barrier; Lattices; Monte Carlo methods; Semiconductor films; Seminars; Silicon compounds; Monte Carlo; Silicon dioxide; evaporation; simulation;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173931
