Title :
Search of resource to control properties LP CVD SiO2 layers by monosilane oxidation
Author :
Chernov, N.A. ; Devyatova, Svetlana F. ; Erkov, Vladimir G.
Author_Institution :
ISP, SB RAS, Novosibirsk, Russia
Abstract :
The effect of reducing the homogeneous part of the monosilane oxidation process by reducing the process pressure on the properties of the SiO2 layers was investigated. This led to a reduction of the surface layers roughness, decreasing the number and the size of inclusions, reducing the fixed oxide charge, permittivity at the temperature of liquid nitrogen, and leakage currents through the insulator.
Keywords :
CVD coatings; inclusions; leakage currents; oxidation; permittivity; silicon compounds; surface roughness; SiO2; control properties; fixed oxide charge; inclusions; leakage current; liquid nitrogen; monosilane oxidation; permittivity; surface layer roughness; Aerosols; Bonding; Inductors; Oxidation; Pressure control; Rough surfaces; Semiconductor films; Silicon compounds; Surface roughness; Temperature; Thin layers LP CVD SiO2; electrophysical and dielectric parameters; monosilane oxidation;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-4571-4
DOI :
10.1109/EDM.2009.5173933
