Title :
Internally Matched (IM) Plated Source Bridge (PSB) Power GaAs FET Achieving A High Performance Power Amplifier In X-band
Author :
Igi, S. ; Kobiki, M. ; Sakayori, T. ; Ohashi, M. ; Wataze, M. ; Suzuki, T. ; Kusunoki, K.
Abstract :
Internal matched devices with 2W and 5W power output at 10 GHz have been developed by using up-side-down mounted GaAs FETs which have PSB (Plated Source Bridge) structures. By parallel running two 5W devices, 7W solid-state power amplifiers in X-band have been practical.
Keywords :
Bridges; Electrodes; FETs; Frequency; Gallium arsenide; High power amplifiers; Impedance; Inductance; Power amplifiers; Solid state circuits;
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MWSYM.1982.1130644
