DocumentCode
2675666
Title
Electronic parameters of K3 WO3 F3 and W-O bonding
Author
Atuchin, Victor V. ; Gavrilova, Tatiana A. ; Kesler, Valeriy G. ; Molokeev, Maxim S. ; Alexandrov, Kiril S.
Author_Institution
Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
fYear
2009
fDate
1-6 July 2009
Firstpage
92
Lastpage
95
Abstract
Crystals of K3WO3F3 in low temperature ferroelectric modification, space group Cm, have been created by chemical synthesis. Crystal structure of this modification has been found by Reitveld method. Electronic parameters of the constituent element core levels have been measured with X-ray photoelectron spectroscopy. Chemical bonding in WO3F3 groups have been discussed.
Keywords
X-ray photoelectron spectra; bonds (chemical); core levels; crystal growth from solution; crystal structure; electronic structure; ferroelectric materials; ferroelectric transitions; potassium compounds; powder technology; space groups; K3WO3F3; Reitveld method; W-O bonds; X-ray photoelectron spectroscopy; chemical synthesis; core levels; crystal growth; crystal structure; electronic parameters; low temperature ferroelectric modification; phase transition; powder sample; space group; Bonding; Chemical elements; Ferroelectric materials; Photoelectricity; Physics; Powders; Scanning electron microscopy; Seminars; Spectroscopy; Temperature; K3 WO3 F3 ; XPS; crystal structure;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-4571-4
Type
conf
DOI
10.1109/EDM.2009.5173938
Filename
5173938
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