Title :
K-and Ka-band Power GaAs FETs
Author :
Noguchi, T. ; Aono, Y.
Abstract :
A deep-recess channel structure has been applied to high power FETs in order to improve performances above to K-band. Internally matched devices have exhibited 2W power output with 16% power-added efficiency at 18 GHz, and 165 mW with 3dB associated gain at 29.5 GHz.
Keywords :
Electrodes; FETs; Fabrication; Gain; Gallium arsenide; Inductance; K-band; MESFETs; Parasitic capacitance; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MWSYM.1982.1130645
