DocumentCode
2675674
Title
K-and Ka-band Power GaAs FETs
Author
Noguchi, T. ; Aono, Y.
fYear
1982
fDate
15-17 June 1982
Firstpage
156
Lastpage
158
Abstract
A deep-recess channel structure has been applied to high power FETs in order to improve performances above to K-band. Internally matched devices have exhibited 2W power output with 16% power-added efficiency at 18 GHz, and 165 mW with 3dB associated gain at 29.5 GHz.
Keywords
Electrodes; FETs; Fabrication; Gain; Gallium arsenide; Inductance; K-band; MESFETs; Parasitic capacitance; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location
Dallas, TX, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1982.1130645
Filename
1130645
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