Title :
Design Of Medium Power, 6-12 GHz GaAs FET Amplifier, Using High Dielectric Networks
Author :
McCarter, S.D. ; Pavio, A.M.
Abstract :
The input and output networks for a 4800 µm (four 1200 µm cells) gallium arsenide FET amplifier were successfully developed and constructed on high dielectric substrate material using distributed transmission line techniques. This paper describes the design and fabrication of the input and output networks and the performance of a completed 6-12 GHz 4 watt amplifier.
Keywords :
Dielectric measurements; Dielectric substrates; Gallium arsenide; High power amplifiers; Impedance; Instruments; Microwave FETs; Power transmission lines; Scattering parameters; Transmission line measurements;
Conference_Titel :
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MWSYM.1982.1130646
