• DocumentCode
    2675692
  • Title

    GaSe1−xSx crystals for teraherz frequency range

  • Author

    Atuchin, Victor V. ; Andreev, Yury M. ; Sarkisov, Sergei Yu ; Morozov, A.N. ; Luo, C.W. ; Ku, S.A.

  • Author_Institution
    Lab. of Opt. Mater. & Struct., SB RAS, Novosibirsk, Russia
  • fYear
    2009
  • fDate
    1-6 July 2009
  • Firstpage
    96
  • Lastpage
    99
  • Abstract
    GaSe1-xSx single crystals has been grown by Bridgman-Stockbarger technique. Structural quality has been evaluated with TEM observation. Terahertz time-domain spectroscopy has been applied for measurements of the frequency-dependent optical constant of doped GaSe crystals as a function of s-content.
  • Keywords
    III-VI semiconductors; crystal growth from melt; crystal structure; optical constants; semiconductor growth; terahertz wave spectra; transmission electron microscopy; Bridgman-Stockbarger technique; GaSe1-xSx; TEM; crystal structure; doped crystals; frequency-dependent optical constant; terahertz time-domain spectroscopy; Crystals; Doping; Frequency conversion; Gases; Nonlinear optics; Optical harmonic generation; Optical pumping; Optical refraction; Optical signal processing; Optical variables control; Gallium selenide; doping; optical properties;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    978-1-4244-4571-4
  • Type

    conf

  • DOI
    10.1109/EDM.2009.5173939
  • Filename
    5173939
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2675692